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    Bostwick, Aaron

    TitlePhysicist Staff Sci/Engr
    SchoolLawrence Berkeley National Lab
    DepartmentAdvanced Light Source
    Address1 Cyclotron Road
    Berkeley CA 94720
    Phone510/486-4816
    vCardDownload vCard

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      Publications listed below are automatically derived from MEDLINE/PubMed and other sources, which might result in incorrect or missing publications. Researchers can login to make corrections and additions, or contact us for help.
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      1. Kang M, Kim B, Ryu SH, Jung SW, Kim J, Moreschini L, Jozwiak C, Rotenberg E, Bostwick A, Kim KS. Universal Mechanism of Band-Gap Engineering in Transition-Metal Dichalcogenides. Nano Lett. 2017 Feb 02. PMID: 28118710.
        View in: PubMed
      2. Ulstrup S, Katoch J, Koch RJ, Schwarz D, Singh S, McCreary KM, Yoo HK, Xu J, Jonker BT, Kawakami RK, Bostwick A, Rotenberg E, Jozwiak C. Spatially Resolved Electronic Properties of Single-Layer WS2 on Transition Metal Oxides. ACS Nano. 2016 Oct 21. PMID: 27768848.
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      3. Arguilla MQ, Katoch J, Krymowski K, Cultrara ND, Xu J, Xi X, Hanks A, Jiang S, Ross RD, Koch RJ, Ulstrup S, Bostwick A, Jozwiak CM, McComb DW, Rotenberg E, Shan J, Windl W, Kawakami RK, Goldberger JE. NaSn2As2: An Exfoliatable Layered van der Waals Zintl Phase. ACS Nano. 2016 Oct 4. PMID: 27700035.
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      4. Jung SW, Shin WJ, Kim J, Moreschini L, Yeom HW, Rotenberg E, Bostwick A, Kim KS. Sublattice Interference as the Origin of s Band Kinks in Graphene. Phys Rev Lett. 2016 May 6; 116(18):186802. PMID: 27203340.
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      5. Cao Y, Wang Q, Waugh JA, Reber TJ, Li H, Zhou X, Parham S, Park SR, Plumb NC, Rotenberg E, Bostwick A, Denlinger JD, Qi T, Hermele MA, Cao G, Dessau DS. Hallmarks of the Mott-metal crossover in the hole-doped pseudospin-1/2 Mott insulator Sr2IrO4. Nat Commun. 2016; 7:11367. PMID: 27102065.
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      6. Autès G, Isaeva A, Moreschini L, Johannsen JC, Pisoni A, Mori R, Zhang W, Filatova TG, Kuznetsov AN, Forró L, Van den Broek W, Kim Y, Kim KS, Lanzara A, Denlinger JD, Rotenberg E, Bostwick A, Grioni M, Yazyev OV. A novel quasi-one-dimensional topological insulator in bismuth iodide ß-Bi4I4. Nat Mater. 2016 Feb; 15(2):154-8. PMID: 26657327.
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      7. Yoo HK, Hyun SI, Moreschini L, Kim HD, Chang YJ, Sohn CH, Jeong da W, Sinn S, Kim YS, Bostwick A, Rotenberg E, Shim JH, Noh TW. Latent instabilities in metallic LaNiO3 films by strain control of Fermi-surface topology. Sci Rep. 2015; 5:8746. PMID: 25735658.
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      8. Choi JS, Chang YJ, Woo S, Son YW, Park Y, Lee MJ, Byun IS, Kim JS, Choi CG, Bostwick A, Rotenberg E, Park BH. Correlation between micrometer-scale ripple alignment and atomic-scale crystallographic orientation of monolayer graphene. Sci Rep. 2014; 4:7263. PMID: 25434431.
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      9. Rotenberg E, Bostwick A. microARPES and nanoARPES at diffraction-limited light sources: opportunities and performance gains. J Synchrotron Radiat. 2014 Sep; 21(Pt 5):1048-56. PMID: 25177993.
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      10. Walter AL, Sahin H, Jeon KJ, Bostwick A, Horzum S, Koch R, Speck F, Ostler M, Nagel P, Merz M, Schupler S, Moreschini L, Chang YJ, Seyller T, Peeters FM, Horn K, Rotenberg E. Luminescence, patterned metallic regions, and photon-mediated electronic changes in single-sided fluorinated graphene sheets. ACS Nano. 2014 Aug 26; 8(8):7801-8. PMID: 25106688.
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      11. Kim YK, Krupin O, Denlinger JD, Bostwick A, Rotenberg E, Zhao Q, Mitchell JF, Allen JW, Kim BJ. Superconductivity. Fermi arcs in a doped pseudospin-1/2 Heisenberg antiferromagnet. Science. 2014 Jul 11; 345(6193):187-90. PMID: 24925913.
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      12. Kim YS, Jeon SH, Bostwick A, Rotenberg E, Ross PN, Walter AL, Chang YJ, Stamenkovic VR, Markovic NM, Noh TW, Han S, Mun BS. Role of preferential weak hybridization between the surface-state of a metal and the oxygen atom in the chemical adsorption mechanism. Phys Chem Chem Phys. 2013 Nov 21; 15(43):19019-23. PMID: 24097254.
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      13. Chang YJ, Moreschini L, Bostwick A, Gaines GA, Kim YS, Walter AL, Freelon B, Tebano A, Horn K, Rotenberg E. Layer-by-layer evolution of a two-dimensional electron gas near an oxide interface. Phys Rev Lett. 2013 Sep 20; 111(12):126401. PMID: 24093281.
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      14. Kim KS, Walter AL, Moreschini L, Seyller T, Horn K, Rotenberg E, Bostwick A. Coexisting massive and massless Dirac fermions in symmetry-broken bilayer graphene. Nat Mater. 2013 Oct; 12(10):887-92. PMID: 23892785.
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      15. Kim KS, Kim TH, Walter AL, Seyller T, Yeom HW, Rotenberg E, Bostwick A. Visualizing atomic-scale negative differential resistance in bilayer graphene. Phys Rev Lett. 2013 Jan 18; 110(3):036804. PMID: 23373943.
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      16. Li G, Höpfner P, Schäfer J, Blumenstein C, Meyer S, Bostwick A, Rotenberg E, Claessen R, Hanke W. Magnetic order in a frustrated two-dimensional atom lattice at a semiconductor surface. Nat Commun. 2013; 4:1620. PMID: 23535641.
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      17. Ohta T, Robinson JT, Feibelman PJ, Bostwick A, Rotenberg E, Beechem TE. Evidence for interlayer coupling and moiré periodic potentials in twisted bilayer graphene. Phys Rev Lett. 2012 Nov 2; 109(18):186807. PMID: 23215315.
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      18. Nie S, Walter AL, Bartelt NC, Starodub E, Bostwick A, Rotenberg E, McCarty KF. Growth from below: graphene bilayers on Ir(111). ACS Nano. 2011 Mar 22; 5(3):2298-306. PMID: 21322532.
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      19. Jeon KJ, Lee Z, Pollak E, Moreschini L, Bostwick A, Park CM, Mendelsberg R, Radmilovic V, Kostecki R, Richardson TJ, Rotenberg E. Fluorographene: a wide bandgap semiconductor with ultraviolet luminescence. ACS Nano. 2011 Feb 22; 5(2):1042-6. PMID: 21204572.
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      20. Kim YS, Bostwick A, Rotenberg E, Ross PN, Hong SC, Mun BS. The study of oxygen molecules on Pt (111) surface with high resolution x-ray photoemission spectroscopy. J Chem Phys. 2010 Jul 21; 133(3):034501. PMID: 20649331.
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      21. Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R, MacDonald AH, Rotenberg E. Observation of plasmarons in quasi-freestanding doped graphene. Science. 2010 May 21; 328(5981):999-1002. PMID: 20489018.
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      22. McChesney JL, Bostwick A, Ohta T, Seyller T, Horn K, González J, Rotenberg E. Extended van Hove singularity and superconducting instability in doped graphene. Phys Rev Lett. 2010 Apr 2; 104(13):136803. PMID: 20481902.
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      23. Bostwick A, McChesney JL, Emtsev KV, Seyller T, Horn K, Kevan SD, Rotenberg E. Quasiparticle transformation during a metal-insulator transition in graphene. Phys Rev Lett. 2009 Jul 31; 103(5):056404. PMID: 19792520.
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      24. Emtsev KV, Bostwick A, Horn K, Jobst J, Kellogg GL, Ley L, McChesney JL, Ohta T, Reshanov SA, Röhrl J, Rotenberg E, Schmid AK, Waldmann D, Weber HB, Seyller T. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide. Nat Mater. 2009 Mar; 8(3):203-7. PMID: 19202545.
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      25. Rotenberg E, Bostwick A, Ohta T, McChesney JL, Seyller T, Horn K. Origin of the energy bandgap in epitaxial graphene. Nat Mater. 2008 Apr; 7(4):258-9; author reply 259-60. PMID: 18354403.
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      26. Ohta T, Bostwick A, McChesney JL, Seyller T, Horn K, Rotenberg E. Interlayer interaction and electronic screening in multilayer graphene investigated with angle-resolved photoemission spectroscopy. Phys Rev Lett. 2007 May 18; 98(20):206802. PMID: 17677726.
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      27. Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E. Controlling the electronic structure of bilayer graphene. Science. 2006 Aug 18; 313(5789):951-4. PMID: 16917057.
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